RF1501NS3S 데이터 시트보기 (PDF) - ROHM Semiconductor
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RF1501NS3S Datasheet PDF : 5 Pages
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RF1501NS3S
Data Sheet
400
350
300
250
200
150
100
1000
IFSM
8.3ms
1cyc.
AVE:269A
IFSM DISPERSION MAP
100
10
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
No break at 30kV
No break at 30kV
25
20
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
30
25
20
15
10
5
0
1000
Tj=25°C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
AVE:16.6ns
trr DISPERSION MAP
100
10
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10
Rth(j-c)
1
0.1
0.001
0.01 0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
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2011.09 - Rev.A
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