RF1501NS3S 데이터 시트보기 (PDF) - ROHM Semiconductor

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RF1501NS3S

Super Fast Recovery Diode

ROHM Semiconductor 

Super Fast Recovery Diode

RF1501NS3S

Series

Ultra Fast Recovery

Dimensions (Unit : mm)

Applications

General rectification

RF1501

NS3S

①

Data Sheet

Land size figure (Unit : mm)

Features

1)Ultra low switching loss

2)High current overload capacity

Construction

Silicon epitaxial planer

Structure

②

ROHM : LPDS

JEITA : TO263S

① Manufacture Year, Week and Day

Taping dimensions (Unit : mm)

①

③

Absolute maximum ratings (Tc=25°C)

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

VRM

Duty≤0.5

350

V

Reverse voltage

VR

Direct voltage

300

V

Average rectified forward current

Io

60Hz half sin wave resistive load at Tc=54°C

20

A

Forward current surge peak

IFSM

60Hz half sin wave, Non-repetitive

one cycle peak value, Tj=25°C

100

A

Junction temperature

Tj

150

°C

Storage temperature

Tstg

- 55 to +150 °C

Electrical characteristics (Tj=25°C)

Parameter

Symbol

Conditions

Min.

Forward voltage

Reverse current

Reverse recovery time

VF

IF=20A

－

IR

VR=300V

－

trr

IF=0.5A,IR=1A,Irr=0.25×IR

－

Thermal resistance

Rth(j-c)

junction to case

－

Typ.

Max.

1.35

1.5

0.06

10

22

30

－

2.5

Unit

V

μA

ns

°C/W

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© 2011 ROHM Co., Ltd. All rights reserved.

1/4

2011.09 - Rev.A

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