IHW30N160R2 데이터 시트보기 (PDF) - Infineon Technologies

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IHW30N160R2

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Infineon Technologies 

IHW30N160R2

Soft Switching Series

Ciss

15V

320V

1nF

1280V

10V

5V

0V

0nC 25nC 50nC 75nC 100nC 125nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=30 A)

100pF

Coss

Crss

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

D=0.5

0.2

10-1K/W

0.1

0.05

10-2K/W

0.02

0.01

R,(K/W)

0.2

0.1514

0.1284

R1

τ, (s)

1.51*10-1

1.14*10-2

8.98*10-4

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-3K/W

10µs 100µs 1ms 10ms 100ms 1s

tP, PULSE WIDTH

Figure 19. IGBT transient thermal

resistance

(D = tp / T)

D=0.5

0.2

10-1K/W

0.1

0.05

0.02

0.01

R,(K/W)

0.1385

0.1354

0.1176

0.087

R1

τ, (s)

5.49*10-2

7.70*10-3

6.83*10-4

1.94*10-5

R2

10-2K/W

1µs

single pulse

C1=τ1/R1 C2=τ2/R2

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 20. Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

Power Semiconductors

8

Rev. 2.1 Nov 09

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