IHW30N160R2 데이터 시트보기 (PDF) - Infineon Technologies

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IHW30N160R2

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Infineon Technologies 

IHW30N160R2

Soft Switching Series

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

0.48

0.48

40

Unit

K/W

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

Symbol

Conditions

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

IGES

gfs

RGint

VGE=0V, IC=500µA

VGE = 15V, IC=30A

Tj=25°C

Tj=150°C

Tj=175°C

VGE=0V, IF=30A

Tj=25°C

Tj=150°C

Tj=175°C

IC=0.75mA,

VCE=VGE

VCE=1600V,

VGE=0V

Tj=25°C

Tj=175°C

VCE=0V,VGE=20V

VCE=20V, IC=30A

min.

1600

-

-

-

-

-

-

5.1

-

-

-

-

Value

Typ.

-

1.8

2.25

2.35

1.65

2.0

2.0

5.8

-

-

-

22.5

none

Unit

max.

-

2.1

-

-

V

2.0

-

-

6.4

5

µA

2500

100 nA

-

S

Ω

Power Semiconductors

2

Rev. 2.1 Nov 09

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