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E13009

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

Unisonic Technologies 

MJE13009

NPN SILICON TRANSISTOR

„ TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

5V

PW

DUTY CYCLE ≤ 10% 68

tR, tF ≤ 10 ns

0.001µF

1k

+5V

1N4933 33

MJE210

33 1N4933

2N2222

RB

VCC

L

IC

1k

IB

+5V

1N4933 1k

D.U.T.

MR826*

VCLAMP

*SELECTED FOR . 1 kV

5.1k

VCE

51

0.02µF 270

Note:

PW and VCC Adjusted for Desired IC

RB Adjusted for Desired IB1

2N2905

47 100

1/2W

MJE200

-VBE(OFF)

RESISTIVE SWITCHING

Coil Data:

Ferroxcube Core #6656

Full Bobbin (~16 Turns) #16

GAP for 200μH/20A

LCOIL = 200μH

VCC = 20V

VCLAMP = 300VDC

VCC = 125V

RC = 15Ω

D1 = 1N5820 or Equiv.

RB = Ω

+10V

25µs

0

-8V

tR, tF < 10 ns

Duty Cycle = 1.0%

RB and RC adjusted

for desired IB and IC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 9

QW-R203-024,F

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