E13009 데이터 시트보기 (PDF) - Unisonic Technologies
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E13009 Datasheet PDF : 9 Pages
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MJE13009
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Emitter Voltage (VBE=-1.5V)
VCEV
700
V
Emitter Base Voltage
VEBO
9
V
Collector Current
Continuous
IC
Peak (Note 3)
ICM
12
24
A
Base Current
Continuous
IB
Peak (Note 3)
IBM
6
A
12
Emitter Current
Continuous
IE
Peak (Note 3)
IEM
TO-220
18
A
36
2
Power Dissipation
TO-220F
0.7
W
TO-3P
80
TO-220
PD
16
Derate above 25℃
TO-220F
5.6
mW/℃
Junction Temperature
Storage Temperature
TO-3P
TJ
TSTG
640
+150
℃
-40 ~ +150
℃
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F
TO-3P
TO-220
Junction to Case
TO-220F
TO-3P
SYMBOL
θJA
θJC
RATINGS
54
62.5
21
4
3.13
1.55
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
VCBO=Rated Value
Emitter Cutoff Current
ON CHARACTERISTICS (Note)
DC Current Gain
Current-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
TEST CONDITIONS
VCEO
ICEV
IEBO
IC = 10mA, IB = 0
VBE(OFF) = 1.5VDC
VBE(OFF) = 1.5VDC, TC = 100℃
VEB = 9VDC, IC = 0
hFE1
hFE 2
VCE(SAT)
VBE(SAT)
IC = 5A, VCE = 5V
IC = 8A, VCE = 5V
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 8A, IB = 1.6A, TC = 100℃
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = 100℃
MIN TYP MAX UNIT
400
V
1
5
mA
1 mA
40
30
1V
1.5 V
3V
2V
1.2 V
1.6 V
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R203-024,F
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