IPA105N15N3G 데이터 시트보기 (PDF) - Infineon Technologies
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IPA105N15N3G Datasheet PDF : 9 Pages
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IPA105N15N3 G
9 Drain-source on-state resistance
R 9H"[Z#4R"T V I 9 V =H .
30
10 Typ. gate threshold voltage
V =H"_T#4R"T V V =H4V 9H
@1A1=5C5A I 9
4
3.5
25
U
3
20
U
2.5
15
2
1.5
10
_d\
1
5
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60
-20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C 4R"V 9H V =H . f & " I
104
8U^^
12 Forward characteristics of reverse diode
I <4R"V H9#
@1A1=5C5A T V
103
103
8[^^
102
S
S
102
S
S
101
101
8]^^
+ 5E
0
20
40
60
80
100
V DS [V]
100
0
@175
0.5
1
1.5
V SD [V]
2
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