IPA105N15N3G 데이터 시트보기 (PDF) - Infineon Technologies

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IPA105N15N3G

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPA105N15N3 G

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Dynamic characteristics

#>@DC3 1@13 9C1>3 5

( DC@DC3 1@13 9C1>3 5

+ 5E5AB5 CA1>B65A3 1@13 9C1>3 5

-DA> ? > 45<1H C9=5

+ 9B5 C9=5

-DA> ? 6645<1H C9=5

1<<C9=5

C U^^

%

C [^^

V =H  .  V 9H   . 

f & " I

%

C ]^^

%

t P"[Z#

%

t]

V 99   .  V =H  . 

%

t P"[RR#

I 9     R =  "

%

tR

%

+*+(

+/0

/

)/

*(

+-

1

,+(( \<

-(+

%

% Z^

%

%

%

!1C5  81AS5  81A13 C5A9BC93 B,#

!1C5 C? B? DA3 5 3 81A75

!1C5 C? 4A19> 3 81A75

, F9C3 89>7 3 81A75

!1C5 3 81A75 C? C1<

!1C5 @<1C51DE? <C175

( DC@DC3 81A75

Q S^

%

)/

% Z8

Q SP

%

/

%

Q ^b

V 99   .  I 9    

V =H  C?  .

%

)+

%

QS

%

,)

--

V \XM_QM`

%

-&)

%J

Q [^^

V 99   .  V =H  .

%

)(. ),) Z8

Reverse Diode

 9? 45 3 ? >C9>? DB6? AF1A4 3 DAA5>C

 9? 45 @D<B5 3 DAA5>C

 9? 45 6? AF1A4 E? <C175

+ 5E5AB5 A53 ? E5AH C9=5

+ 5E5AB5 A53 ? E5AH 3 81A75

IH

I H$\`X^Q

V H9

t ]]

Q ]]

T 8   S

V =H  .  I <    

T V   S

V G   .  I <4+/  

Pi <'Pt     U B

%

%

+/ 6

%

%

),0

%

(&1

)&* J

%

))-

% Z^

%

+0(

% Z8

,# , 55 697DA5  6? A71C5 3 81A75 @1A1=5C5A4569>9C9? >

+ 5E 

@175 

  

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