108N15N(2009) 데이터 시트보기 (PDF) - Infineon Technologies

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108N15N
(Rev.:2009)

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB108N15N3 G IPP111N15N3 G

IPI111N15N3 G

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

Thermal resistance, junction -

ambient

R thJA minimal footprint

-

6 cm2 cooling area3)

-

-

0.7 K/W

-

62

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

150

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=160 µA

2

3

Zero gate voltage drain current

I DSS

V DS=120 V, V GS=0 V,

T j=25 °C

-

0.1

-V

4

1 µA

V DS=120 V, V GS=0 V,

T j=125 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=83 A,

(TO220; TO262)

-

10

100

1

100 nA

9.4

11.1 mΩ

V GS=10 V, I D=83 A,

-

9.1

10.8

(TO263)

V GS=8 V, I D=41 A,

(TO220; TO262)

-

9.5

11.3

Gate resistance

Transconductance

V GS=8 V, I D=41 A,

(TO263)

-

9.2

11

RG

-

2.4

-Ω

g fs

|V DS|>2|I D|R DS(on)max,

I D=83 A

47

94

-S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.1

page 2

2009-12-01

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