108N15N(2009) 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
일치하는 목록
108N15N Datasheet PDF : 11 Pages
| |||
IPB108N15N3 G IPP111N15N3 G
IPI111N15N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO263)
ID
150 V
10.8 mΩ
83 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free according to IEC61249-2-21
Type
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package
Marking
PG-TO263-3
108N15N
PG-TO220-3
111N15N
PG-TO262-3
111N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=83 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
83
59
332
330
±20
214
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2009-12-01
Share Link: 