STB28NM50N 데이터 시트보기 (PDF) - STMicroelectronics

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STB28NM50N

N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET

STMicroelectronics 

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 250 V, ID = 10.5 A

RG = 4.7 Ω VGS = 10 V

(see Figure 18)

Min. Typ. Max. Unit

13.6

ns

19

ns

-

-

62

ns

52

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 21 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 21 A, di/dt = 100 A/µs

VDD = 400 V

(see Figure 23)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 21 A, di/dt = 100 A/µs

VDD = 400 V, Tj = 150 °C

(see Figure 23)

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

21 A

-

84 A

-

1.5 V

326

ns

-

5

µC

30

A

376

ns

- 6.2

µC

33.2

A

Doc ID 17432 Rev 2

5/21

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