STB28NM50N 데이터 시트보기 (PDF) - STMicroelectronics

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STB28NM50N

N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 1 mA, VGS = 0

VDS = max rating

VDS = max rating, @125 °C

VGS = ± 25 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 10.5 A

500

V

1 µA

100 µA

100 nA

2

3

4V

0.135 0.158 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

Coss(eq)(1)

Equivalent output

capacitance time related

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

Rg Gate input resistance

VDS = 25 V, f = 1 MHz,

VGS = 0

VGS = 0, VDS = 0 to 50 V

VDD = 400 V, ID = 21 A,

VGS = 10 V,

(see Figure 19)

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

1735

pF

- 122 - pF

4.3

pF

- 418 - pF

50

nC

- 9.5 - nC

25

nC

- 2.7 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

4/21

Doc ID 17432 Rev 2

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