MG1275S-BA1MM 데이터 시트보기 (PDF) - Littelfuse, Inc
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MG1275S-BA1MM Datasheet PDF : 6 Pages
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Power Module
1200V 75A IGBT Module
Figure 7: Gate Charge characteristics
25
VCC=600V
20
IC=75A
TJ =25°C
15
10
5
00 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Qg˄µC˅
Figure 9: Reverse Biased Safe Operating Area
250
200
150
100
TJ =150°C
50
TC =25°C
VGE =15V
00 200 400 600 800 1000 1200 1400
VCE˄V˅
Figure 11: Rated Current vs. TC
150
125
TJ =150°C
VGE ı15V
100
75
50
25
0
0
MG1275S-BA1MM
25 50 75 100 125 150 175
TC Case Temperature(°C)
Figure 8: Typical Capacitances vs. VCE
10
Cies
VGE =0V
f=1MHz
1
Coes
Cres
0.10 5 10 15 20 25 30 35
VCE˄V˅
Figure 10: Short Circuit Safe Operating Area
1200
1000
800
600
400
200
00
TJ =150°C
TC =25°C
VGE =15V
tscİ10µs
200 400 600 800 1000 1200 1400
VCE˄V˅
Figure 12: Diode Forward Characteristics
150
125
100
TJ =125°C
75
50
TJ =25°C
25
0 0 0.5 1.0 1.5 2.0 2.5 3 3.5
VF˄V˅
549
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
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