MG1275S-BA1MM 데이터 시트보기 (PDF) - Littelfuse, Inc
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MG1275S-BA1MM Datasheet PDF : 6 Pages
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Power Module
1200V 75A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
IGBT
VGE(th)
VCE(sat)
Parameters
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Diode
VF
trr
IRRM
Qrr
Turn - off Energy
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
Test Conditions
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25°C
IC=75A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V,VGE=±20V
VCC=600V, IC=75A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=75A
RG =15Ω
VGE=±15V
Inductive Load
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
IF=75A , VGE=0V, TJ =25°C
IF=75A , VGE=0V, TJ =125°C
IF=75A , VR=800V
diF/dt=-1000A/μs
TJ =125°C
Min
Typ
Max
5.0
6.2
7.0
1.8
2.0
0.2
0.5
2
-100
100
780
5.52
0.4
0.26
150
160
65
65
440
500
55
70
7.45
10.3
4.9
7.8
2.0
2.48
1.7
2.2
200
70
8.2
Unit
V
V
V
mA
mA
nA
nC
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
V
V
ns
A
μC
MG1275S-BA1MM
157
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
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