FDB86363 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB86363 Datasheet PDF : 6 Pages
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Typical Characteristics
2000
1000
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1ms
1
SINGLE PULSE
10ms
TJ = MAX RATED
TC = 25oC
100ms
0.1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01 0.1
1
10 100
tAV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
300
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
250
VDD = 5V
200
TJ = 175oC
150
TJ = 25oC
100
50
TJ = -55oC
0
2
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
300
100 VGS = 0 V
10
TJ = 175 oC
1
TJ = 25 oC
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
300
250
200
150
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
100
5V
50
0
0
80μs PULSE WIDTH
Tj=25oC
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
300
250
200
150
100
VGS
15V Top
10V
8V 5.5V
7V
6V
5V
5.5V
5V Bottom
50
80μs PULSE WIDTH
Tj=175oC
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
FDB86363_F085 Rev. C2
4
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