FDB86363 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB86363 Datasheet PDF : 6 Pages
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FDB86363_F085
N-Channel PowerTrench® MOSFET
80 V, 110 A, 2.4 mΩ
June 2014
D
D
Features
Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
G
GS
TO-263
S
FDB SERIES
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate Above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
110
See Figure 4
512
300
2.0
-55 to + 175
0.5
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDB86363
Device
FDB86363_F085
Package
D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2014 Fairchild Semiconductor Corporation
1
FDB86363_F085 Rev. C2
www.fairchildsemi.com
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