MG1215H-XBN2MM 데이터 시트보기 (PDF) - Littelfuse, Inc
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MG1215H-XBN2MM Datasheet PDF : 8 Pages
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Power Module
1200V 15A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
30
25
20
15
10
Tj =125°C
5
Tj =25°C
00
0.5 1.0 1.5 2.0 2.5 3.0
VF˄V˅
Figure 9: Switching Energy vs. Forward Current
Diode-inverter
2.0
RG=75Ω
VCE=600V
1.6 Tj =125°C
1.2
0.8
0.4
00
5 10 15 20 25 30
IF (A)
Figure 11: Diode Forward Characteristics
Diode- rectifier
80
70
60
50
40
30
20
10
00
MG1215H-XBN2MM
TVj =125°C
TVj =25°C
0.4 0.8 1.2 1.6 2.0
VF˄V˅
Figure 8: S witching Energy vs. Gate Resistort
for Diode Inverter
2.0
IF=15A
VCE=600V
1.6 Tj =125°C
1.2
0.8
0.4
040
60
80
100 120 140
RG˄Ω˅
Figure 10: Transient Thermal Impedance of
Diode and IGBT-inverter
5
Diode
1
IGBT
0.1
0.01
0.001 0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure 12: Typical Output Characteristics
IGBT- brake chopper
30
VGE =15V
24
18
Tj =25°C
12
Tj =125°C
6
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE˄V˅
2604
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
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