MG1215H-XBN2MM 데이터 시트보기 (PDF) - Littelfuse, Inc
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MG1215H-XBN2MM Datasheet PDF : 8 Pages
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Power Module
1200V 15A IGBT Module
Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
VRRM
IF(RMS)
IFSM
Parameters
Repetitive Reverse Voltage
R.M.S. Forward Current Per Diode
Non-Repetitive Surge Forward
Current
I2t
Test Conditions
TJ=25°C
TC=80°C
TJ =45°C, t=10ms, 50Hz
TJ =45°C, t=8.3ms, 60Hz
TJ =45°C, t=10ms, 50Hz
TJ =45°C, t=8.3ms, 60Hz
Values
1600
50
320
360
512
537
Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
VF
IR
RthJCD
Parameters
Test Conditions
Forward Voltage
IF=15A, VGE=0V, TJ =25°C
IF=15A, VGE=0V, TJ =125°C
Reverse Leakage Current
VR=1600V, TJ=25°C
VR=1600V, TJ=125°C
Junction-to-Case Thermal Resistance (Per Diode)
Min
Typ
1.0
0.9
Max
50
1
1.05
Unit
V
A
A
A
A2s
A2s
Unit
V
V
μA
mA
K/W
Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
IGBT
VCES
VGES
IC
ICM
Ptot
Diode
VRRM
IF(AV)
IFRM
I2t
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Test Conditions
TJ=25°C
TC=25°C
TC=80°C
tp=1ms
TJ=25°C
TC=25°C
tp=1ms
TJ =125°C, t=10ms, VR=0V
Values
1200
±20
25
15
30
105
1200
15
30
60
Unit
V
V
A
A
A
W
V
A
A
A2s
MG1215H-XBN2MM
2301
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
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