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L24C16 데이터 시트보기 (PDF) - Unspecified

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L24C16 Datasheet PDF : 17 Pages
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output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence
with a stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond
until the write is complete (see Figure 5 on page 7).
PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write, and the 4K, 8K and 16K
devices are capable of 16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of
the first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K, 16K) more
data words. The EEPROM will respond with a "0" after each data word received. The microcontroller
must terminate the page write sequence with a stop condition (see Figure 6 on page 8).
The data word address lower three (2K) or four (4K, 8K, 16K) bits are internally incremented
following the receipt of each data word. The higher data word address bits are not incremented,
retaining the memory page row location. When the word address, internally generated, reaches the
page boundary, the following byte is placed at the beginning of the same page. If more than eight (2K)
or sixteen (4K, 8K, 16K) data words are transmitted to the EEPROM, the data word address will "roll
over" and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM
inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition
followed by the device address word. The read/write bit is representative of the operation desired.
Only if the internal write cycle has completed will the EEPROM respond with a "0", allowing the read
or write sequence to continue.
Read Operations
Read operations are initiated the same way as write operations with the exception that the read/write
select bit in the device address word is set to "1". There are three read operations: current address read,
random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last address
accessed during the last read or write operation, incremented by one. This address stays valid between
operations as long as the chip power is maintained. The address "roll over" during read is from the last
byte of the last memory page to the first byte of the first page. The address "roll over" during write is
from the last byte of the current page to the first byte of the same page.
Once the device address with the read/write select bit set to "1" is clocked in and acknowledged by the
EEPROM, the current address data word is serially clocked out. The microcontroller does not respond
with an input "0" but does generate a following stop condition (see Figure 7 on page 8).
RANDOM READ: A random read requires a "dummy" byte write sequence to load in the data word
address. Once the device address word and data word address are clocked in and acknowledged by the
EEPROM, the microcontroller must generate another start condition. The microcontroller now
initiates a current address read by sending a device address with the read/write select bit high. The
EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller
does not respond with a "0" but does generate a following stop condition (see Figure 8 on page 9).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random
address read. After the microcontroller receives a data word, it responds with an acknowledge. As
Shenzhen LIZE Electronic Technology Co., Ltd
Version: 2.0
Date: 15, Apr. 2010
Page: 7 of 16
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