12N65M5 데이터 시트보기 (PDF) - STMicroelectronics

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12N65M5

MOSFET POWER MOSFET N-CH 650V

STMicroelectronics 

Electrical characteristics

STD/F/I/P/U12N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

AM05581v1

RDS(on)

(norm)

2.1

1.9

1.7

ID= 4.25 A

VGS= 10 V

AM05501v2

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.7

0.5

-50 -25 0

25 50 75 100 125 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS @ 1 mA vs

temperature

VSD

(V)

1.2

TJ=-50°C

AM05584v1

BVDSS

(norm)

1.07

AM05583v1

1.0

TJ=25°C

1.05

0.8

0.6

TJ=150°C

0.4

1.03

1.01

0.99

0.97

0.2

0.95

0

0 10 20 30 40 50 ISD(A)

0.93

-50 -25 0 25 50 75 100 TJ(°C)

Figure 18. Switching losses vs gate resistance

(1)

E

(µJ)

60 ID=5A

VDD=400V

50

Eon

AM05585v1

40

30

Eoff

20

10

0

0

10 20

30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

8/23

Doc ID 15428 Rev 5

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