12N65M5 데이터 시트보기 (PDF) - STMicroelectronics
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12N65M5 Datasheet PDF : 23 Pages
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STD/F/I/P/U12N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤ 8.5 A, di/dt ≤400 A/µs; VPeak < V(BR)DSS, VDD = 400 V
Value
TO-220, IPAK,
DPAK, I²PAK
TO-220FP
650
25
8.5
5.4
34
70
8.5 (1)
5.4 (1)
34 (1)
25
2.5
150
15
2500
- 55 to 150
150
Unit
V
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK IPAK I²PAK TO-220 TO-220FP
Rthj-case
Thermal resistance junction-case
max
1.79
Rthj-amb
Thermal resistance junction-
ambient max
100
Rthj-pcb (1)
Thermal resistance junction-pcb
max
50
Tl
Maximum lead temperature for
soldering purpose
5
62.5
300
°C/W
°C/W
°C/W
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 15428 Rev 5
3/23
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