1N3879 데이터 시트보기 (PDF) - Vishay Semiconductors
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1N3879 Datasheet PDF : 8 Pages
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VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
103
1N3889 to 1N3893
102
10
TJ = 150 °C
TJ = 25 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 10 - Maximum Forward Voltage vs. Forward Current,
1N3889 Series
103
1N3889 to 1N3893
Ø = 180°
120°
60°
102
30°
Ø
10
Ø
Ø = DC
180°
120°
60°
30°
1
1
10
TJ = 150 °C
102
103
Average Forward Current (A)
Fig. 11 - Maximum High Level Forward Power Loss vs. Average
Forward Current, 1N3889 Series
10
140
At any rated load condition and with
120
rated VRRM applied following surge.
100
80
60
40
60 Hz
50 Hz
20
0
1
2
4 6 8 10 20 40 60
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 12 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N3879 Series
At any rated load condition and with
150
rated VRRM applied following surge.
100
60 Hz
50 Hz
50
0
1
2
4 6 8 10 20 40 60
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N3889 Series
1N3879 to 1N3883
1
1N3889 to 1N3893
10-1
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95311
Revision: 11-Jan-18
6
Document Number: 93144
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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