1N3879 데이터 시트보기 (PDF) - Vishay Semiconductors
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1N3879 Datasheet PDF : 8 Pages
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VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 6 A, 12 A
DO-4 (DO-203AA)
PRIMARY CHARACTERISTICS
IF(AV)
Package
6 A, 12 A
DO-4 (DO-203AA)
Circuit configuration
Single
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
IF(RMS)
IFSM
TEST CONDITIONS
TC maximum
50 Hz
60 Hz
1N3879(R) TO 1N3883(R)
6 (1)
100
9.5
72
75 (1)
1N3889(R) TO 1N3893(R)
12 (1)
100
19
145
150 (1)
I2t
I2t
VRRM
trr
TJ
50 Hz
60 Hz
Range
Range
26
103
23
94
363
856
50 to 400 (1)
50 to 400 (1)
See Recovery Characteristics table See Recovery Characteristics table
-65 to +150
-65 to +150
Note
(1) JEDEC® registered values
UNITS
A
°C
A
A
A2s
I2s
V
ns
°C
Revision: 11-Jan-18
1
Document Number: 93144
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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