FDP12N50 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
일치하는 목록
FDP12N50 Datasheet PDF : 10 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 VGS = 10.0 V
8.0 V
10
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.050.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.5
Figure 2. Transfer Characteristics
40
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
10
150oC
-55oC
25oC
1
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
1.0
VGS = 10V
0.5
VGS = 20V
0.0
0
* Note : TJ = 25oC
6
12
18
24
30
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
Ciss
1000
*Note:
1. VGS = 0V
2. f = 1MHz
500
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50T Rev. C1
150oC
25oC
10
*Notes:
1. VGS = 0V
1
2. 250μs Pulse Test
0.0
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
0
*Note: ID = 11.5A
0
4
8
12
16
20
24
Qg, Total Gate Charge [nC]
3
www.fairchildsemi.com
Share Link: 