FDP12N50 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDP12N50 Datasheet PDF : 10 Pages
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FDP12N50 / FDPF12N50T
N-Channel UniFETTM MOSFET
500 V, 11.5 A, 650 mΩ
Features
• RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge (Typ. 22 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
TO-220
G
GDS
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
S
FDP12N50 FDPF12N50T
500
±30
11.5
11.5 *
6.9
6.9 *
46
46 *
456
11.5
16.7
4.5
165
42
1.33
0.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP12N50
0.75
62.5
FDPF12N50T Unit
3.0
62.5
oC/W
©2012 Fairchild Semiconductor Corporation
1
FDP12N50 / FDPF12N50T Rev. C1
www.fairchildsemi.com
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