FDB8880_NL 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB8880_NL Datasheet PDF : 11 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
1.5
1.1
VGS = VDS, ID = 250µA
ID = 250µA
1.2
0.9
1.0
0.6
0.3
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
1000
CISS = CGS + CGD
10
VDD = 15V
8
CRSS = CGD
COSS ≅ CDS + CGD
VGS = 0V, f = 1MHz
100
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
2
DESCENDING ORDER:
ID = 54A
ID = 5A
0
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2005 Fairchild Semiconductor Corporation
6
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
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