FDB8880_NL 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB8880_NL Datasheet PDF : 11 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
400
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
100
10µs
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100µs
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
DC
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
40
TJ = 175oC
20 TJ = 25oC
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
160
VGS = 4.5V
120
VGS = 10V
80
40
VGS = 3.5V
VGS = 3V
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 2.5V
0
0
0.25
0.5
0.75
1.0
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
20
ID = 54A
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
ID = 5A
8
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.7
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.53
1.36
1.19
1.02
0.85
0.7
-80
VGS = 10V, ID = 54A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2005 Fairchild Semiconductor Corporation
5
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
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