IKW25N120H3 데이터 시트보기 (PDF) - Infineon Technologies
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IKW25N120H3 Datasheet PDF : 16 Pages
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IKW25N120H3
Highspeedswitchingseriesthirdgeneration
vGE(t)
90% VGE
IC(t)
vCE(t)
90% IC
10% IC
10% VGE
t
90% IC
10% IC
t
I,V
dIF/dt
ab
a
b
dI
Figure C. Definition of diode switching
characteristics
t
td(off)
tf
td(on)
tr
t
Figure A.
vGE(t)
90% VGE
10% VGE
t
IC(t)
2% IC
t
vCE(t)
Eoff =
t1
t1
Figure B.
t2
VCE x IC x dt
t2
Eon =
t3
t3
t4
VCE x IC x dt
2% VCE
t4
t
Figure D.
CC
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Ls,
relief capacitor Cr,
(only for ZVT switching)
15
Rev.2.1,2014-12-01
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