IKW25N120H3 데이터 시트보기 (PDF) - Infineon Technologies

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IKW25N120H3

1200V high speed switching series third generation

Infineon Technologies 

IKW25N120H3

Highspeedswitchingseriesthirdgeneration

1

1

D=0.5

D=0.5

0.2

0.2

0.1

0.1

0.1

0.05

0.05

0.02

0.1

0.02

0.01

0.01

single pulse

single pulse

0.01

0.01

0.001

1E-6

i:

1

2

3

4

5

ri[K/W]: 0.08133 0.09366 0.22305 0.05925 5.7E-3

τi[s]: 2.6E-4 1.7E-3 0.01009673 0.0336145 0.2730749

1E-5 1E-4 0.001 0.01 0.1

1

tp,PULSEWIDTH[s]

Figure 21. IGBTtransientthermalimpedance

(D=tp/T)

0.001

1E-6

i:

1

2

3

4

5

ri[K/W]: 0.3921 0.5592 0.4557 0.077415 9.0E-3

τi[s]: 2.5E-4 1.6E-3 9.0E-3 0.03875911 0.2738223

1E-5 1E-4 0.001 0.01 0.1

1

tp,PULSEWIDTH[s]

Figure 22. Diodetransientthermalimpedanceasa

functionofpulsewidth

(D=tp/T)

700

Tj=25°C, IF = 25A

Tj=175°C, IF = 25A

600

Tj=25°C, IF = 25A

Tj=175°C, IF = 25A

3

500

2

400

1

300

200

200 400 600 800 1000 1200 1400 1600

diF/dt,DIODECURRENTSLOPE[A/µs]

Figure 23. Typicalreverserecoverytimeasafunction

ofdiodecurrentslope

(VR=600V)

0

200

600

1000

1400

1800

diF/dt,DIODECURRENTSLOPE[A/µs]

Figure 24. Typicalreverserecoverychargeasa

functionofdiodecurrentslope

(VR=600V)

12

Rev.2.1,2014-12-01

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