STP80NF55L-08(2003) 데이터 시트보기 (PDF) - STMicroelectronics
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STP80NF55L-08
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
STP80NF55L-08 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27V, ID = 40A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 27.5 V, ID = 80A,
VGS = 4.5V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 27V, ID = 40A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP80NF55L-08
Min.
Typ.
35
145
75
20
30
Max.
100
Unit
ns
ns
nC
nC
nC
Min.
Typ.
85
65
Max.
Unit
ns
ns
Min.
Typ.
85
280
6.5
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
3/8
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