STP80NF55L-08(2003) 데이터 시트보기 (PDF) - STMicroelectronics

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STP80NF55L-08
(Rev.:2003)

N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STP80NF55L-08

STB80NF55L-08

N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

STP80NF55L-08

STB80NF55L-08

55 V

55 V

0.008Ω

0.008Ω

s TYPICAL RDS(on) = 0.0065Ω

s LOW THRESHOLD DRIVE

s LOGIC LEVEL DEVICE

ID

80 A

80 A

3

2

1

3

1

TO-220

D2PAK

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC CONVERTERS

s AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID (1)

Drain Current (continuos) at TC = 25°C

ID (1)

Drain Current (continuos) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (2) Peak Diode Recovery voltage slope

EAS(3) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(q) Pulse width limited by safe operating area

April 2003

Value

55

55

± 16

80

80

320

300

2

15

870

–55 to 175

175

(1) Current Limited by Package

(2) ISD ≤80A, di/dt ≤500A/µs, VDD =40V Tj ≤ TJMAX.

(3) Starting Tj=25°C, ID=40A, VDD=40V

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

°C

1/8

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