HEF40106B-Q100 데이터 시트보기 (PDF) - NXP Semiconductors.

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HEF40106B-Q100

Hex inverting Schmitt trigger

NXP Semiconductors. 

Nexperia

13. Transfer characteristics

Table 11. Transfer characteristics

VSS = 0 V; see Figure 6 and Figure 7.

Symbol Parameter

Conditions VDD

VT+

positive-going threshold voltage

VT

negative-going threshold voltage

VH

hysteresis voltage

[1] All typical values are at Tamb = 25 C.

5V

10 V

15 V

5V

10 V

15 V

5V

10 V

15 V

HEF40106B-Q100

Hex inverting Schmitt trigger

Tamb = 40 C to +85 C Tamb = 40 C Unit

to +125 C

Min Typ[1] Max Min Max

2.0 3.0 3.5 2.0 3.5 V

3.7 5.8 7.0 3.7 7.0 V

4.9 8.3 11.0 4.9 11.0 V

1.5 2.2 3.0 1.5 3.0 V

3.0 4.5 6.3 3.0 6.3 V

4.0 6.5 10.1 4.0 10.1 V

0.5 0.8

-

0.5

-V

0.7 1.3

-

0.7

-V

0.9 1.8

-

0.9

-V

VO

VT+

VI

VH

VT−

VH

VT−

VT+

Fig 6. Transfer characteristic

VI

001aag107

VO

001aag108

Fig 7. Waveforms showing definition of VT+ and VT

(between limits at 30 % and 70 %) and VH

HEF40106B_Q100

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 7 August 2012

© Nexperia B.V. 2017. All rights reserved

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