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HEF40106B-Q100 데이터 시트보기 (PDF) - NXP Semiconductors.

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HEF40106B-Q100
NXP
NXP Semiconductors. NXP
HEF40106B-Q100 Datasheet PDF : 15 Pages
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Nexperia
HEF40106B-Q100
Hex inverting Schmitt trigger
11. Dynamic characteristics
Table 7. Dynamic characteristics
Tamb = 25 C; CL = 50 pF; tr = tf 20 ns; wave forms see Figure 4; test circuit see Figure 5; unless otherwise specified.
Symbol Parameter
Conditions VDD
Extrapolation formula[1] Min Typ Max Unit
tPHL
HIGH to LOW
propagation delay
nA or nB to nY 5 V
10 V
63 ns + (0.55 ns/pF)CL -
29 ns + (0.23 ns/pF)CL -
90 180 ns
35
70 ns
15 V
22 ns + (0.16 ns/pF)CL -
30
60 ns
tPLH
LOW to HIGH
propagation delay
nA or nB to nY 5 V
10 V
58 ns + (0.55 ns/pF)CL -
29 ns + (0.23 ns/pF)CL -
75 150 ns
35
70 ns
15 V
22 ns + (0.16 ns/pF)CL -
30
60 ns
tTHL
HIGH to LOW output nY to LOW
5V
transition time
10 V
10 ns + (1.00 ns/pF)CL -
9 ns + (0.42 ns/pF)CL -
60 120 ns
30
60 ns
15 V
6 ns + (0.28 ns/pF)CL -
20
40 ns
tTLH
LOW to HIGH output nA or nB to
5V
transition time
HIGH
10 V
10 ns + (1.00 ns/pF)CL -
9 ns + (0.42 ns/pF)CL -
60 120 ns
30
60 ns
15 V
6 ns + (0.28 ns/pF)CL -
20
40 ns
[1] Typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF).
Table 8. Dynamic power dissipation
VSS = 0 V; tr = tf 20 ns; Tamb = 25 C.
Symbol Parameter
VDD Typical formula
PD
dynamic power
5 V PD = 2300 fi + (fo CL) VDD2 (W)
dissipation
10 V PD = 9000 fi + (fo CL) VDD2 (W)
15 V PD = 20000 fi + (fo CL) VDD2 (W)
where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
(fo CL) = sum of the outputs;
VDD = supply voltage in V.
HEF40106B_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 August 2012
© Nexperia B.V. 2017. All rights reserved
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