STP11NM50N(2015) 데이터 시트보기 (PDF) - STMicroelectronics

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STP11NM50N
(Rev.:2015)

N-channel 500 V, 0.40 Ω typ., 8.5 A MDmesh™ II Power MOSFET in a TO-220 package

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP11NM50N

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source

V(BR)DSS breakdown voltage

ID = 1 mA, VGS = 0

500

V

IDSS

t(s) IGSS

c VGS(th)

rodu RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on-

resistance

VDS = 500 V

VDS = 500 V, TC= 125 °C

VGS = ± 25 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 4.5 A

1 µA

100 µA

±100 µA

23

4

V

0.40 0.47 Ω

lete P Table 6. Dynamic

so Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

b Ciss

- O Coss

t(s) Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

- 547 - pF

- 42 - pF

-

2

- pF

duc Coss eq. (1)

Equivalent output

capacitance

VGS = 0, VDS = 0 to 400 V

- 210 - pF

ro Qg Total gate charge

P Qgs Gate-source charge

teQgd Gate-drain charge

VDD = 400 V, ID = 8.5 A,

VGS = 10 V (see Figure 14)

- 19 - nC

- 3.7 - nC

- 10 - nC

ole RG Gate input resistance

f=1 MHz, ID=0

- 5.8 - Ω

bs 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

O increases from 0 to 80% VDS

4/13

DocID17156 Rev 4

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