STP11NM50N
N-channel 500 V, 0.40 Ω typ., 8.5 A MDmesh™ II Power MOSFET
in a TO-220 package
Datasheet - obsolete product
Features
Order code VDS @ TJ max RDS(on) max ID
7$%
STP11NM50N
550 V
0.47 Ω 8.5 A
roduct(s) 72
lete P Figure 1. Internal schematic diagram
Obso '7$%
duct(s) - *
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Pro6
olete 6&
Obs Table 1. Device summary
Order code
Marking
Package
Packaging
STP11NM50N
11NM50N
TO-220
Tube
November 2015
This is information on a discontinued product.
DocID17156 Rev 4
1/13
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