IKP10N60T(2007) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

IKP10N60T
(Rev.:2007)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP10N60T

p

1 ,0 m J

*) Eon and Etsinclude losses

due to diode recovery

*) Eon and Ets include losses

due to diode recovery

E ts*

0,8 mJ

Ets*

0 ,8 m J

0 ,6 m J

0 ,4 m J

0 ,2 m J

E off

0,6 mJ

0,4 mJ

Eon*

0,2 mJ

Eoff

Eon*

0 ,0 m J

0A

5A

10A

15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 23Ω,

Dynamic test circuit in Figure E)

0,0 mJ

10Ω

20Ω

30Ω

40Ω

50Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 10A,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

0 ,6 m J

due to diode recovery

0 ,5 m J

Ets*

0 ,4 m J

0,3mJ Eoff

0 ,2 m J

0,1mJ Eon*

0 ,0 m J

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 10A, RG = 23Ω,

Dynamic test circuit in Figure E)

0 ,8 m J

*) Eon and Ets include losses

due to diode recovery

0 ,6 m J

E ts*

0 ,4 m J

E off

0 ,2 m J

E on*

0 ,0 m J

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 10A, RG = 23Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.3 Sep. 07

Share Link: