IKP10N60T(2007) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

IKP10N60T
(Rev.:2007)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

TrenchStop® Series

IKP10N60T

p

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

1.35

K/W

1.9

62

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

VGE=0V, IC=0.2mA

VGE = 15V, IC=10A

Tj=25°C

Tj=175°C

VGE=0V, IF=10A

Tj=25°C

Tj=175°C

IC=0.3mA,VCE=VGE

VCE=600V,

VGE=0V

Tj=25°C

Tj=175°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=10A

min.

600

-

-

-

-

4.1

-

-

-

-

Value

typ.

-

1.5

1.8

1.6

1.6

4.6

-

-

-

6

none

Unit

max.

-V

2.05

-

2.0

-

5.7

µA

40

1000

100 nA

-S

Ω

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

Coss

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

551

- pF

-

40

-

-

17

-

Gate charge

QGate

VCC=480V, IC=10A

-

62

- nC

VGE=15V

Internal emitter inductance

LE

-

7

- nH

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤5μs

-

100

-A

VCC = 400V,

Tj = 25°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2

Rev. 2.3 Sep. 07

Share Link: