EF9345 데이터 시트보기 (PDF) - STMicroelectronics

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EF9345

HMOS2 SINGLE CHIP SEMI-GRAPHIC DISPLAY PROCESSOR

STMicroelectronics 

EF9345

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCC*

Vin*

TA

Tstg

PDm

Supply Voltage

Input Voltage

Operating Temperature

Storage Temperature

Maximum Power Dissipation

-0.3, 7.0

V

-0.3, 7.0

V

0, +70

oC

-55, +150

oC

0.75

W

* With respect to Vss.

Stresses above those hereby listed may cause permanent damage to the device. The ratings are stress ones only and functional operation of

the device at these or any conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to maximum

rating conditions for extended periods may affect reliability. Standard MOS circuits handling procedure should be used to avoid possible damage

to the device.

ELECTRICAL CHARACTERISTICS

VCC = 5.0V ±5%, VSS = 0V, TA = 0 to +70°C, unless otherwise specified.

Symbol

VCC

VIL

VIH

IIN

VOH

VOL

PD

CIN

ITSI

Parameter

Supply Voltage

Input Low Voltage

Input High Voltage : CLK

Other Inputs

Input Leakage Current

Output High Voltage (Iload = -500µA)

Output Low Voltage : Iload = 4mA ; AD(0:7), ADM(0:7), AM(8:13)

Iload = 1mA ; Other Outputs

Power Dissipation

Input Capacitance

Three State (Off State) Input Current

Min. Typ. Max. Unit

4.75

5

5.25

V

-0.3

0.8

V

2.2

VCC

V

2

VCC

10

µA

2.4

V

0.4

V

0.4

250

mW

15

pF

10

µA

4/38

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