BAV70W(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAV70W
(Rev.:2015)

High-speed switching diodes

NXP Semiconductors. 

NXP Semiconductors

BAV70 series

High-speed switching diodes

7. Characteristics

Table 8. Characteristics

Tamb = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Per diode

VF

forward voltage

[1]

IF = 1 mA

-

-

IF = 10 mA

-

-

IF = 50 mA

-

-

IF = 150 mA

-

-

IR

reverse current

VR = 25 V

-

-

VR = 80 V

-

-

VR = 25 V; Tj = 150 C -

-

VR = 80 V; Tj = 150 C -

-

Cd

diode capacitance

VR = 0 V; f = 1 MHz

-

-

trr

reverse recovery time

[2] -

-

VFR

forward recovery voltage

[3] -

-

[1] Pulse test: tp  300 s;   0.02.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

[3] When switched from IF = 10 mA; tr = 20 ns.

Max Unit

715 mV

855 mV

1

V

1.25 V

30 nA

0.5 A

30 A

100 A

1.5 pF

4

ns

1.75 V

BAV70_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 8 — 18 March 2015

© NXP Semiconductors N.V. 2015. All rights reserved.

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