BAV70W(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAV70W
(Rev.:2015)

High-speed switching diodes

NXP Semiconductors. 

BAV70 series

High-speed switching diodes

Rev. 8 — 18 March 2015

Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

Table 1. Product overview

Type number Package

NXP

JEITA

BAV70

SOT23 -

BAV70M

SOT883 SC-101

BAV70S

SOT363 SC-88

BAV70T

BAV70W

SOT416

SOT323

SC-75

SC-70

JEDEC

Package

configuration

TO-236AB small

-

leadless ultra

small

-

very small

-

ultra small

-

very small

Configuration

dual common cathode

dual common cathode

quadruple common

cathode/common cathode

dual common cathode

dual common cathode

1.2 Features and benefits

 High switching speed: trr  4 ns

 Low leakage current

 Small SMD plastic packages

 Low capacitance: Cd  1.5 pF

 Reverse voltage: VR  100 V

 AEC-Q101 qualified

1.3 Applications

 High-speed switching

 General-purpose switching

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Per diode

IR

reverse current

VR

reverse voltage

trr

reverse recovery time

Conditions

VR = 80 V

Min Typ

-

-

-

-

[1] -

-

[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

Max

0.5

100

4

Unit

A

V

ns

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