K50H603 데이터 시트보기 (PDF) - Infineon Technologies

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K50H603

High speed IGBT in Trench and Fieldstop technology

Infineon Technologies 

IKW50N60H3

Highspeedswitchingseriesthirdgeneration

Maximumratings

Parameter

Collector-emittervoltage,Tvj≥25°C

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Pulsedcollectorcurrent,tplimitedbyTvjmax

Turn off safe operating area

VCE≤600V,Tvj≤175°C,tp=1µs

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Diodepulsedcurrent,tplimitedbyTvjmax

Gate-emitter voltage

Short circuit withstand time

VGE=15.0V,VCC≤400V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

Tvj=150°C

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Operating junction temperature

Storage temperature

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

Symbol

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tvj

Tstg

M

Value

Unit

600

V

100.0

A

50.0

200.0

A

200.0

A

60.0

A

30.0

200.0

A

±20

V

µs

5

333.0

167.0

W

-40...+175

°C

-55...+150

°C

260

°C

0.6

Nm

ThermalResistance

Parameter

Characteristic

IGBT thermal resistance,

junction - case

Diode thermal resistance,

junction - case

Thermal resistance

junction - ambient

Symbol Conditions

Rth(j-c)

Rth(j-c)

Rth(j-a)

Max.Value

Unit

0.45

K/W

1.05

K/W

40

K/W

4

Rev.2.2,2014-03-12

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