K50H603 데이터 시트보기 (PDF) - Infineon Technologies

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K50H603

High speed IGBT in Trench and Fieldstop technology

Infineon Technologies 

IKW50N60H3

Highspeedswitchingseriesthirdgeneration

8

Eoff

Eon

7

Ets

6

5

Eoff

Eon

Ets

4

5

3

4

2

3

2

1

1

0

10 20 30 40 50 60 70 80 90 100

IC,COLLECTORCURRENT[A]

Figure 13. Typicalswitchingenergylossesasa

functionofcollectorcurrent

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

rG=7Ω,testcircuitinFig.E)

0

2

6

10

14

18

22

rG,GATERESISTOR[Ω]

Figure 14. Typicalswitchingenergylossesasa

functionofgateresistor

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

IC=50A,testcircuitinFig.E)

3.0

Eoff

Eon

Ets

2.5

2.0

1.5

1.0

0.5

3.5

Eoff

Eon

Ets

3.0

2.5

2.0

1.5

1.0

0.5

0.0

25

50

75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

0.0

200

250

300

350

400

450

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 15. Typicalswitchingenergylossesasa

functionofjunctiontemperature

(indload,VCE=400V,VGE=15/0V,IC=50A,

rG=7Ω,testcircuitinFig.E)

Figure 16. Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(ind.load,Tj=175°C,VGE=15/0V,IC=50A,

rG=7Ω,testcircuitinFig.E)

10

Rev.2.2,2014-03-12

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