AS8E32K32 데이터 시트보기 (PDF) - Austin Semiconductor
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AS8E32K32 Datasheet PDF : 12 Pages
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AUSTIN SEMICONDUCTOR, INC.
AS8E32K32
32K x 32 EEPROM
CAPACITANCE TABLE (1)
VIN = 0V, f = 1MHz, TA =25ºC
Symbol Parameter
CADD A0-A14 Capactiance
COE OE\ Capactiance
CWE, CCE WE\ and CE\ Capactiance
CIO I/O 0 - I/O 31 Capactiance
1. This parameter is guaranteed but not tesed
Maximum
24
24
6
12
Units
pF
pF
pF
pF
Notes
4, 14
4, 14
4, 14
4, 14
TRUTH TABLE
MODE
Read
Write (2)
Standby/Write
Write Inhibit
Write Inhibit
Output Disable
CE\
OE\
WE\
I/O
VIL
VIL
VIH
DOUT
VIL
VIH
VIL
DIN
VIH
X (1)
X
High Z
X
X
VIH
X
VIL
X
X
VIH
X
High Z
AC TEST CONDITIONS
Current Source
Device
-
Under
Test
+
Ceff = 50pf
Current Source
IOL
+
IOH
Vz = 1.5V
(Bipolar
Supply)
Test Specifications
Input pulse levels....................................VSS to 3V
Input rise and fall times.......................................5ns
Input timing reference levels.............................1.5V
Output reference levels.....................................1.5V
Output load................................See Figures 1 and 2
Notes:
Vz is programable from -2V to + 7V.
I and I programmable from 0 to 16 mA.
OL
OH
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
AS8E32K32
REV. 1.5 9/99
4
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.
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