IRF1607 데이터 시트보기 (PDF) - International Rectifier

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IRF1607

AUTOMOTIVE MOSFET

International Rectifier 

IRF1607

12000

10000

8000

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

6000

4000

Coss

2000

Crss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 85A

16

12

VDS = 60V

VDS = 37V

VDS = 15V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

100

200

300

400

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

TJ = 175° C

100

10000

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10

TJ = 25 ° C

1

0.1

0.2

V GS = 0 V

0.6

1.0

1.4

1.8

2.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

100µsec

1msec

10

Tc = 25°C

Tj = 175°C

Single Pulse

1

1

10

10msec

100

VDS , Drain-toSource Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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