IRFP2907 데이터 시트보기 (PDF) - International Rectifier

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IRFP2907

AUTOMOTIVE MOSFET

International Rectifier 

IRFP2907

20000

16000

12000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

8000

4000

Coss

Crss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 125A

16

VDS = 60V

VDS = 37V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0 100 200 300 400 500 600 700

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

TJ = 175° C

100

10

TJ = 25 ° C

1

0.1

0.0

V GS = 0 V

0.5

1.0

1.5

2.0

2.5

3.0

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

10000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

1000

10us

100us

100

1ms

TC = 25 °C

TJ = 175°C

Single Pulse

10

1

10

10ms

100

VDS, Drain-to-Source Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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