IRFP2907 데이터 시트보기 (PDF) - International Rectifier
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IRFP2907 Datasheet PDF : 9 Pages
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PD -93906A
IRFP2907
AUTOMOTIVE MOSFET
HEXFET® Power MOSFET
Typical Applications
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
D
VDSS = 75V
Benefits
q Advanced Process Technology
G
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
RDS(on) = 4.5mΩ
ID = 209A
S
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
209
148
840
470
3.1
± 20
1970
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.32
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
9/7/00
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