TIP150 데이터 시트보기 (PDF) - Comset Semiconductors
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TIP150 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIP150
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCBO
VCEO
ICEO
ICEOX(sus)
IEBO
VCE(SAT)
VBE(SAT)
hFE
hfe
VF
COB
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage (4)
Collector-Emitter Cutoff
Current
Collector-Emitter sustaining
Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (4-5)
Base-Emitter Saturation
Voltage (4-5)
Forward Current transfer ratio
(4-5)
Small Signal Forward Current
transfer ratio
Diode forward Voltage
Output Capacitance
IC= 1 mA, IE= 0
IC= 10 mA, IB= 0
IB= 0, VCE = 300 V
IE= 0, VCLAMP = VCEO
VEB= 8 V, IC= 0
IC= 1 A, IB= 10 mA
IC= 2 A, IB= 100 mA
IC= 5 A, IB= 250 mA
IC= 2 A, IB= 100 mA
IC= 5 A, IB= 250 mA
VCE= 5.0 V, IC= 2.5 A
VCE= 5.0 V, IC= 5 A
VCE= 5.0 V, IC= 7 A
VCE= 5.0 V, IC= 0.5 A
f= 1 kHz
IF= 7 A
IE= 0 ; VCB= 10 V
f= 1 MHz
Min Typ Max Unit
300
-
-
V
300
-
-
V
-
- 250 µA
7
-
-
A
-
- 15 mA
-
- 1.5
-
- 1.5 V
-
-
2
-
-
-
-
2.2
2.3
V
150 -
-
50 -
-
-
15 -
-
200 -
-
-
-
- 3.5 V
-
- 150 pF
SWITCHING TIMES.
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
td
Delay Time
tr
Rise time
ts
Storage Time
tf
Fall Time
VCC= 250 V; IC= 5 A
IB1= -IB2= 250 mA
tp = 20 µs, duty cycle <2%.
- 0.03 -
- 0.18 -
- 3.5 -
µs
- 1.6 -
4. These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 2.0%
5. These parameters must be measured using voltage-sensing contacts, separate from the
current carrying contacts.
15/10/2012
COMSET SEMICONDUCTORS
2/3
09/11/2012
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