TIP150 데이터 시트보기 (PDF) - Comset Semiconductors
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TIP150 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIP150
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
High voltage, high forward and reverse energy designed for industrial and consumer
applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCBO
VCEO
VEBO
IC
ICM
IB
PT
tJ
ts
tL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (1)
Base Current
Power Dissipation at Case
Temperature (2)
Power Dissipation at free Air
@ Tmb < 25°
Temperature (3)
Junction Temperature
Storage Temperature range
Lead Temperature 3.2 mm from case for 10 seconde
300
300
8
7
10
1.5
80
2
-65 to +150
-65 to +150
260
1. This value applies for tp <5ms, duty cycle <10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
2.5
62.5
Unit
V
V
V
A
A
A
Watts
°C
Unit
°C/W
15/10/2012
COMSET SEMICONDUCTORS
1/3
09/11/2012
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