SGA-8343X 데이터 시트보기 (PDF) - Stanford Microdevices

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SGA-8343X

Reliability Qualification Report

Stanford Microdevices 

SGA-8343X Reliability Qualification Report

XII. Median Time to Failure Extrapolation from Accelerated Life Test Data

The following data demonstrates the results from accelerated life tests performed on the

Sirenza 4A SiGe HBT Process. The test was performed on 77 units running at a peak

junction temperature of 195°C. The test exceeded 10,000 hours (1.14 years) with no

failures. The FIT rate / MTTF calculation can be found below. The FIT rates were

generated assuming 1 failure. In reality, there were no failures, making this a very

conservative calculation.

Sirenza Microdevices Process 4A SiGe HBT

FIT Rate / MTTF Calculation

SGA Series Devices

Parameters

*Ea = 0.7 eV

Junction Temp C

55

125

FIT Rate

0.053

4.136

MTTF (hrs)

1.89E+10

2.42E+08

*The Ea of 0.7eV is conservative, 0.85eV is the activation energy for electromigration which is assumed to be the primary failure mechanism for

the SiGe process.

**Sirenza Microdevices does not assume any liability arising from the use of this data.

Table 3: Median Time to Failure and Activation Energy for SGA-8343X.

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