F1S45N06 데이터 시트보기 (PDF) - Fairchild Semiconductor
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F1S45N06 Datasheet PDF : 8 Pages
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RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
SINGLE PULSE
10-4
PDM
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
400
TJ = MAX RATED
SINGLE PULSE
TC = 25oC
100
100µs
10
1
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS(MAX) = 60V
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
103
VGS = 20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
=
I25
-1---7---5-1---5-–--0--T----C---
VGS = 10V
102
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
40
10-3 10-2 10-1
100
101
102
t, PULSE WIDTH (ms)
TC = 25oC
103
104
FIGURE 5. PEAK CURRENT CAPABILITY
RFG45N06, RFP45N06, RF1S45N06SM Rev. B
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